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| MMDT2222A DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N2222A NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultra-small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. 4 5 6 2 1 3 SOT- 363 FEATURES Electrically Isolated Dual NPN Switching Transistor Lead-Free Plating (100% matte tin finish) 6 5 4 APPLICATIONS General Purpose Amplifier Applications Hand-Held Computers, PDAs Device Marking Code: M2A 1 2 3 MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Voltage Collector Current Total Power Dissipation (Note 1) TJ = 25C Unless otherwise noted Symbol VCBO V CEO VEB IC PD TJ Tstg Value 75 40 6.0 600 200 -55 to +150 -55 to +150 Units V V V mA mW C C Operating Junction Temperature Range Storage Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Note 1) Symbol R thja Value 625 Units C/W Note 1. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout 1/2/2006 Page 1 www.panjit.com MMDT2222A ELECTRICAL CHARACTERISTICS (Each Transistor) TJ = 25C Unless otherwise noted Parameter Symbol Conditions Min 40 75 6.0 35 50 75 50 100 40 35 0.6 300 Typ Max 10 20 300 0.3 1.0 1.2 2.0 8.0 25 10 25 225 60 V V V MHz pF pF ns ns ns ns Units V V V nA nA Collector-Emitter Breakdown Voltage V (BR)CEO I C = 10mA Collector-Base Breakdown Voltage V (BR)CBO I C = 10uA Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current V (BR)EBO I E = 10uA ICEX IBL VCE= 60V, V EB= 3.0V V CE= 60V, V EB 3.0V = I C = 0.1mA, V CE= 10V I C = 1.0mA, V CE= 10V I C = 10mA, V CE= 10V DC Current Gain (Note 2) h FE IC=10mA, VCE =10V, TJ =-55C I C = 150mA, V CE= 10V I C = 500mA, V CE= 10V I C = 150mA, V CE= 1.0V Collector-Emitter Saturation Voltage (Note 2) Base-Emitter Saturation Voltage (Note 2) Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) fT CCBO CEBO td tr ts tf I C = 150mA, I B = 15mA I C = 500mA, I B = 50mA I C = 150mA, I B = 15mA I C = 500mA, I B = 50mA V CE= 20V, I C= 20mA f = 100MHz VCB= 10V, f =1.0MHz VEB = 0.5V, f =1.0MHz VCC = 30V, I C=150mA VBE(off) = -0.5V, IB1= 15mA V CC= 30V, I C=150mA I B1= I B2= 15mA Note 2. Short duration test pulse used to minimize self-heating 1/2/2006 Page 2 www.panjit.com MMDT2222A CHARACTERISTICS CURVES (Each Transistor) TJ = 25C Unless otherwise noted 350 300 250 TJ = 100 C TJ = 150 C 0.8 0.7 0.6 0.5 V BE (on) TJ = 25 C TJ = 25 C TJ = 100 C TJ = 150 C 200 hFE 150 100 50 0 0.1 1 10 100 1000 Collector Current, IC (mA) VCE = 10V 0.4 0.3 0.2 0.1 0.0 0.1 1 10 VCE = 10V 100 1000 Collector Current, IC (mA) Fig. 1. hFE vs. Ic 1.2 TJ = 150 C Fig. 2. VBE vs. Ic 500 450 400 350 V CE (sat) (mV) 300 250 200 150 100 50 0 0.1 1 10 100 1000 Collector Current, IC (mA) TJ = 25 C IC/IB = 10 1.0 0.8 V BE (sat) (V) IC/IB = 10 TJ = 25 C 0.6 TJ = 150 C 0.4 0.2 0.0 0.1 1 10 100 1000 Collector Current, IC (mA) TJ = 100 C Fig. 3. VCE(sat) vs. Ic Fig. 4. VBE(sat) vs. Ic 100 f=1 MHz Capacitance (pF CIB (EB) 10 COB (CB) 1 0.1 1 10 100 Reverse Voltage, V R (V) Fig. 5. Capacitances 1/2/2006 Page 3 www.panjit.com MMDT2222A PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS ORDERING INFORMATION MMDT2222A T/R7 - 3,000 units per 7 inch reel MMDT2222A T/R13 -10,000 units per 13 inch reel Copyright PanJit International, Inc 2005 The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or system s. Pan Jit does not convey any license under its patent rights or rights of others. 1/2/2006 Page 4 www.panjit.com |
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